SEMICONDUCTOR DEVICES HAVING MULTI-LAYER PAD AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device having a multi-layer pad is provided to prevent crack of an interlayer dielectric caused by a probing upon a wire bonding or evaluation of an electrical characteristic by changing the pad structure of the semiconductor device having a multi-layer pad. CONSTITUTION: A semiconductor device includes the first interlayer dielectric(122) on a semiconductor substrate(120). The first conductive pad(124) is formed on the first interlayer dielectric(122) and is located in a length direction along the outer portion of one side of a pad window region(140). The second interlayer dielectric(128) is formed on the resulting surface and has the first via hole(126) through which a portion of the first conductive pad is exposed. The first conductive plug(127) is formed within the first via hole. The second conductive pad(130) electrically connected to the first conductive plug is formed on the second interlayer dielectric(128) on an upper side of the first conductive pad. The third interlayer dielectric(134) is formed on the resulting surface and has the second via hole(132) through which a portion of the second conductive pad is exposed. The second conductive plug(133) is formed within the second via hole. The third conductive pad(136) electrically connected to the second conductive plug is formed on the third interlayer dielectric and are formed to include the pad window region and its peripheral regions. A protection film(138) through which the surface of the third conductive pad in the pad window region is exposed is formed on the resulting surface.