| 摘要 |
PROBLEM TO BE SOLVED: To quickly and economically correct positional deviations of fundamental opening groups in an electron beam lithography method, in which the fundamental opening groups in a cell-projection shaping diaphragm, are exposed in batch. SOLUTION: In an electron beam lithography, reference marks on a sample stage are irradiated with rectangular beams, formed through all rectangular openings contained in the fundamental opening groups of a rectangular shaping diaphragm and a cell-projection shaping diaphragm, the shape errors and positional errors of the rectangular beams are calculated by detecting the reflected electrons from the marks and corrected by respectively feeding back the errors to a shaping deflector and a positioning deflector. In addition, the arrangement of the fundamental opening groups of the cell-projection shaping diagram is detected by mechanically scanning the diaphragm and the rotational errors of the diaphragm are corrected. |
