METHOD FOR FORMING METAL INTERCONNECTIONS OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A metal interconnection formation method is provided to reduce a step difference between a cell region and a peripheral region by using O3-TEOS(ozone-tetra ethyl ortho silicate) instead of an expensive CMP(chemical mechanical polishing). CONSTITUTION: Interlayer dielectrics(10,20) having different thickness are formed on a substrate defined by a cell region and a peripheral region. Wiring metal films(11,21) are formed on the interlayer dielectrics(10,20). After depositing a TiN film(22) on the resultant structure, the TiN film(22) formed on the cell region is selectively removed. O3-TEOS films(12,23) are formed on the resultant structure. The wiring metal film(11) on the cell region is exposed by etch-back. A metal interconnection is then formed by patterning the exposed wiring metal film(11).