SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit device which realizes a low power consumption by supplying both a first-amplitude input signal which corresponds to a first operating voltage and a second operating voltage which are supplied respectively from a first MOSFET and a second MOSFET and a second-amplitude input signal which corresponds to a prescribed intermediate voltage between the first operating voltage and the second operating voltage to a differential amplifier circuit. SOLUTION: In the differential amplifier circuit. P-channel load MOSFETs Q5, Q6 in a current mirror shape are connected to drains of N-channel differential MOSFETs Q3, Q4 to which an input voltage VIN and a reference voltage VREF are supplied to their gates, and an N-channel current-source MOSFET Q7 is installed at their common source via an N-channel switching MOSFET Q1. A ground potential VSS is grounded to the source of the N-channel current- source MOSFET Q7, and a constant voltage VBL is supplied to its gate. A P-channel switching MOSFET Q2 is installed across the common source of the P-channel load MOSFETs Q5, Q6 and a power-supply voltage VDDQ.