| 摘要 |
A method for forming a mold-encapsulated semiconductor device includes the steps of mounting a semiconductor chip on a metallic plate having a metallic interconnect pattern thereon, encapsulating the semiconductor chip on the metallic interconnect pattern, removing the bottom of the metallic plate by etching to expose the metallic interconnect pattern, and forming external terminals on the bottom of the metallic interconnect pattern. The method reduces the thickness as well as the planar dimensions of the semiconductor device. |
