发明名称 |
Multi level sensing of NAND memory cells by external bias current |
摘要 |
A method and circuit for sensing multi states of a NAND memory cell by applying plurality of external sensing bias current at a constant positive gate and bias voltage and detecting a cell current wherein the cell current depends upon the state of the memory cell.
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申请公布号 |
US6141244(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19990388696 |
申请日期 |
1999.09.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PAWLETKO, JOSEPH G.;CHEN, PAU-LING;HOLLMER, SHANE CHARLES |
分类号 |
G11C11/56;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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