发明名称 |
Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer |
摘要 |
A structure and method for making copper interconnections in an integrated circuit are described. The structure is a damascene copper connector whose upper surface is coplanar with the upper surface of the insulating layer in which it is embedded. Out-diffusion of copper from the connector is prevented by two barrier layers. One is located at the interface between the connector and the insulating layer while the second barrier is an insulating layer which covers the upper surface of the connector. The damascene process involves filling a trench in the surface of the insulator with copper and then removing the excess by chem.-mech. polishing. Since photoresist is never in direct contact with the copper the problem of copper oxidation during resist ashing has been effectively eliminated.
|
申请公布号 |
US6140237(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19990294048 |
申请日期 |
1999.04.19 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
CHAN, LAP;ZHENG, JIA ZHEN |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|