发明名称 Valley-fill power factor correction circuit
摘要 A valley-fill power factor correction circuit includes a rectifying circuit connected to a charge storage circuit. There is a voltage doubler circuit disposed between the rectifying circuit and the charge storage circuit. The voltage doubler circuit performs the function of filling the normally truncated input current waveform. As arranged, the input current waveform can be substantially maintained with less distortion resulting in a Fourier transform in compliance with the IEC specifications. The valley-fill circuit of the invention is capable of achieving a high power factor.
申请公布号 US6141230(A) 申请公布日期 2000.10.31
申请号 US19980114339 申请日期 1998.07.13
申请人 BROADBAND TELCOM POWER, INC. 发明人 SUM, K. KIT
分类号 H02M1/00;H02M1/42;(IPC1-7):H02M7/06 主分类号 H02M1/00
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