Method of manufacturing semiconductor device having multilayer wiring

摘要

A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, a third insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film are formed on the second insulating film. Thereafter, the third insulating film is patterned to a prescribed pattern. An opening is formed in the first and second insulating films using the third insulating film as a mask.