发明名称 Method of fabricating self-aligned contact window
摘要 A method of fabricating a self-aligned contact window includes forming an undoped dielectric layer on a substrate having a least gate structure. The dopants are implanted into a pre-determined region of the undoped dielectric layer and the dielectric layer with the dopants is then removed. A self-aligned contact is therefore completed.
申请公布号 US6140168(A) 申请公布日期 2000.10.31
申请号 US19990241330 申请日期 1999.02.01
申请人 UNITED MICROELECTRONICS CORP. 发明人 TAN, WAYNE;LIN, KUN-CHI
分类号 H01L21/60;(IPC1-7):H01L21/425 主分类号 H01L21/60
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