发明名称 |
Method of fabricating self-aligned contact window |
摘要 |
A method of fabricating a self-aligned contact window includes forming an undoped dielectric layer on a substrate having a least gate structure. The dopants are implanted into a pre-determined region of the undoped dielectric layer and the dielectric layer with the dopants is then removed. A self-aligned contact is therefore completed.
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申请公布号 |
US6140168(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19990241330 |
申请日期 |
1999.02.01 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TAN, WAYNE;LIN, KUN-CHI |
分类号 |
H01L21/60;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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