发明名称 |
Method for producing a silicon single crystal wafer and a silicon single crystal wafer |
摘要 |
There is disclosed a method of producing a silicon single crystal wafer wherein a silicon single crystal ingot in which nitrogen is doped is grown by Czochralski method, the single crystal ingot is sliced to yield a silicon single crystal wafer, and then the silicon single crystal wafer is subjected to heat treatment with a rapid heating/rapid cooling apparatus, and the silicon single crystal wafer produced by the method. There can be provided a method for producing a silicon single crystal wherein growth of crystal defects (grown-in defects) in silicon single crystal produced by CZ method are suppressed, particularly growth of crystal defects are prevented in the surface layer of the wafer, and crystal defect can be surely removed by a short time heat treatment even if small crystal defects are generated.
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申请公布号 |
US6139625(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19990264099 |
申请日期 |
1999.03.08 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
TAMATSUKA, MASARO;KOBAYASHI, NORIHIRO;OKA, SATOSHI |
分类号 |
C30B15/00;C30B33/00;(IPC1-7):C30B15/04 |
主分类号 |
C30B15/00 |
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