发明名称 Method of fabricating a glue layer of contact/via
摘要 A method of fabricating a glue layer of a contact/via. A substrate is provided and a contact/via opening is formed within a dielectric layer on the substrate to expose the substrate. A glue layer is formed to cover the contact/via opening and conformal the structure. An RF sputtering process is performed on the substrate to remove an overhang structure on the upper corner of the glue layer while it is formed. A conductive layer is then formed in the contact/via opening to electrically connect to the substrate.
申请公布号 US6140227(A) 申请公布日期 2000.10.31
申请号 US19980200514 申请日期 1998.11.25
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHEN, COMING;LUR, WATER
分类号 H01L23/522;H01L21/28;H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L23/522
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