| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an abrasive material which enables a high polishing rate to be achieved in chemomechanical polishing of a barrier metal layer, such as a Ta or TaN layer, on a semiconductor substrate by incorporating abrasive grains comprising a hardly water-soluble fluorocompound into the same. SOLUTION: The hardly water-soluble fluorocompound is selected preferably from among cerium fluoride, cerium oxyfluoride, magnesium fluoride, calcium fluoride and their mixtures. The wt. average particle size of the abrasive grains comprising the fluorocompound is preferably, 0.005-2.0μm, still preferably 0.01-0.5μm in terms of polishing rate and the amount of scratch appearing. The abrasive grains comprising the fluorocompound may be used alone or together with at least one other kind of abrasive grains. Preferably, the other kind of abrasive grains is selected from among cerium oxide, aluminum oxide, silicon dioxide, zirconium oxide, titanium oxide, germanium oxide, silicon nitride and manganese oxide having a wt. average particle size of 0.005-2.0μm.</p> |
