发明名称 |
Memory device with sense amplifier that sets the voltage drop across the cells of the device |
摘要 |
The logic state stored in a memory cell having a Frohmann-Bentchkowsky p-channel memory transistor and a n-channel MOS access transistor is read by a sense amplifier which senses the magnitude of the current output from the memory cell during a read operation. The sense amplifier controls the voltage drop across the memory transistor and the access transistor (and a switching transistor) which, in turn, allows the difference in the magnitudes of the current from the programmed and unprogrammed cells to be optimized.
|
申请公布号 |
US6141246(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19990373791 |
申请日期 |
1999.08.13 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
DERMAN, ITAI;MEYASSED, MOSHE;KALNITSKY, ALEXANDER |
分类号 |
G11C11/56;G11C16/04;G11C16/10;G11C16/26;H01L27/115;H01L29/788;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|