Semiconductor device and method of manufacturing without damaging HSQ layer and metal pattern utilizing multiple dielectric layers

摘要

HSQ is employed as a dielectric layer in manufacturing a high density, multi-metal layer semiconductor device. The degradation of deposited HSQ layers during formation of the semiconductor device, as from photoresist stripping using an O2-containing plasma, is avoided by forming first and second dielectric layers on the HSQ layer, forming a photoresist mask on the second dielectric layer and etching to form an opening in the second dielectric layer leaving the first dielectric layer exposed. The first dielectric layer protects the HSQ from degradation during subsequent stripping.