| 发明名称 |
Semiconductor wafer and method of manufacturing same |
| 摘要 |
In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1x1016 atoms/cm3 or more.
|
| 申请公布号 |
US6140213(A) |
申请公布日期 |
2000.10.31 |
| 申请号 |
US19980084006 |
申请日期 |
1998.05.26 |
| 申请人 |
SONY CORPORATION |
发明人 |
TAKIZAWA, RITSUO;KUSAKA, TAKAHISA;HIGUCHI, TAKAYOSHI;KANBE, HIDEO;OHASHI, MASANORI |
| 分类号 |
H01L21/20;H01L21/265;H01L21/322;H01L27/148;H01L29/167;H01L29/36;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
