发明名称 |
Semiconductor metallization structure |
摘要 |
A high temperature metallization system for use with a semiconductor device (23). The semiconductor device (23) has a multi-layer metallization system (36). An adhesion layer (37) of the metallization system (36) is formed on a semiconductor substrate (20). A barrier layer (38) that contains a nickel alloy is formed on the adhesion layer (37). A protective layer (39) is formed on the barrier layer (38). The barrier layer (38) inhibits solder components from diffusing toward the semiconductor substrate (20) during high temperature processing.
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申请公布号 |
US6140703(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19960774304 |
申请日期 |
1996.12.26 |
申请人 |
MOTOROLA, INC. |
发明人 |
CRONIN, WAYNE A.;SCRIVNER, BRIAN L.;KOETZ, KIRBY F.;PARSEY, JR., JOHN M. |
分类号 |
H01L21/52;H01L23/482;H01L23/50;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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