发明名称 |
Technique for extending the limits of photolithography |
摘要 |
A method of forming a wiring pattern in a device comprises forming an array of grooves in a mask, forming first spacers adjacent vertical walls of the grooves, removing the mask, forming second spacers adjacent the first spacers, and filling areas between the first spacers and areas between the second spacers with a material to form the wiring pattern.
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申请公布号 |
US6140217(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19980116791 |
申请日期 |
1998.07.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JONES, HARRIS C.;RYAN, JAMES G. |
分类号 |
H01L21/027;H01L21/768;H01L23/528;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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