| 摘要 |
PROBLEM TO BE SOLVED: To continuously work a large-sized substrate using a safe and inexpensive device without the need of operation such as heating inside a highly vacuumproof device such as for vacuum vapor deposition. SOLUTION: This method comprises deposition of a thin film layer of a metal compound onto the surface of a metal, ceramic, glass, silicon wafer, quartz, compound semiconductor, plastic or the like by issuing, by the aid of compressed gas, powder of a metal compound having ionic crystal other than that of metal such as a metal salt or organometallic compound, and formation of a metal oxide layer <=10μm in film thickness by heating the thin film layer in an oxygen atmosphere.
|
