| 摘要 |
An ion source apparatus is disclosed in this invention. The ion source apparatus includes an anode having an interior space for containing a plasma and an opening into the space. The ion source apparatus further includes a hollow cathode within the space. The ion source apparatus further includes a dopant ion-source composed of compounds comprising element selected from a group of elements consisting of silicon and germanium, the dopant ion-source disposed next to the space. The ion source apparatus further includes a voltage means connected to the anode, the hollow cathode, and the dopant ion source for discharging a plasma into the space for bombarding the dopant ion source for generating a dopant ion compound. The ion source apparatus further includes an ion-beam extracting means for extracting the dopant ion compound through the opening. In an alternate preferred embodiment, the ion source apparatus employs an electron beam device to generate the dopant ion compound. In yet another preferred embodiment, the ion source apparatus employs an ion beam device for generating the dopant ion compound.
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