发明名称 Semiconductor apparatus and method of producing same
摘要 A semiconductor apparatus having at least a compound film containing nitrogen and a method for production of the same, wherein the compound film containing nitrogen is formed under conditions where the ratio of the flow rates of the nitrogen with respect to an inert gas is 0.125 to 1.0.
申请公布号 US6140229(A) 申请公布日期 2000.10.31
申请号 US19980027149 申请日期 1998.02.20
申请人 SONY CORPORATION 发明人 SUMI, HIROFUMI
分类号 H01L21/28;H01L21/203;H01L21/3205;H01L23/485;H01L23/52;H01L23/532;(IPC1-7):H01L21/44 主分类号 H01L21/28
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