发明名称 |
Method for fabricating a cylinder capacitor |
摘要 |
A method for fabricating a cylinder capacitor of a DRAM cell that starts with forming a first oxide layer and then a doped first polysilicon layer on a substrate, patterning the first polysilicon layer to form a first opening that exposes the first oxide layer, forming a polysilicon spacer at the laterals of the first opening. Then, a portion of the first oxide layer is removed to expose the substrate by using the polysilicon spacer and the first polysilicon layer as a mask. A doped second polysilicon layer is formed on the first polysilicon layer and in the first opening. A portion of the second polysilicon layer is removed to form a second opening. A oxide spacer is formed on the laterals of the second opening, and is used as mask to remove a portion of the second polysilicon layer for forming a lower electrode. A dielectric layer and then a third polysilicon layer are formed on the lower electrode after the silicon oxide spacer is removed, wherein the third polysilicon is an upper electrode.
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申请公布号 |
US6140201(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19980172407 |
申请日期 |
1998.10.14 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
JENQ, J. S. JASON;CHIEN, SUN-CHIEH;WU, DER-YUAN;WANG, CHUAN-FU |
分类号 |
H01L21/02;H01L21/314;H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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