发明名称 Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same
摘要 A negative type photoresist composition includes a polymer which contains a repetition unit which is expressed by a general chemical formula (1) and has a weight average molecule weight in a range of 1000 to 500000, a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The general chemical formula (1) is as follows, where in the general chemical formula (1), R1 is a hydrogen atom or a methyl group, R2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group. Also, the general chemical formula (2) is as follows, In the general chemical formula (2), X is a group expressed by a general chemical formula (3), a hydrogen atom, a hydrocarbon group containing carbon atoms in a range of 1 to 6, an alkoxy group containing carbon atoms in a range of 1 to 3, or a hydroxyl group, a1, a2 and a3 are 1 or 2, respectively, b1, b2 and b3 are 0 or 1, respectively, and a1+b1=2, a2+b2=2, and a3+b3=2, and R8 is a hydrogen atom, or an alkyl group containing carbon atoms in a range of 1 to 6.
申请公布号 US6140010(A) 申请公布日期 2000.10.31
申请号 US19980140650 申请日期 1998.08.26
申请人 NEC CORPORATION 发明人 IWASA, SHIGEYUKI;MAEDA, KATSUMI;NAKANO, KAICHIRO;HASEGAWA, ETSUO
分类号 G03F7/004;G03F7/033;G03F7/038;H01L21/027;(IPC1-7):G03F7/004 主分类号 G03F7/004
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