发明名称 |
EFG crystal growth apparatus |
摘要 |
A new EFG (Edge-defined Film-fed Growth) crucible/die configuration is provided which (a) overcomes the tendency for silicon feed material to form a solid mass near the center hub region in the hot-zone during the crystal growth and (b) prevent the crucible/die unit from fracturing its supporting susceptor during cool-down.
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申请公布号 |
US6139811(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19990276453 |
申请日期 |
1999.03.25 |
申请人 |
ASE AMERICAS, INC. |
发明人 |
CAO, JEFFREY X.;GIANCOLA, ROBERT M.;CAPRINI, CHARLES G.;GARCIA, DAVID |
分类号 |
B01D9/00;C30B15/00;C30B15/34;C30B29/06;H01L21/208;(IPC1-7):B01D9/00 |
主分类号 |
B01D9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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