发明名称 EFG crystal growth apparatus
摘要 A new EFG (Edge-defined Film-fed Growth) crucible/die configuration is provided which (a) overcomes the tendency for silicon feed material to form a solid mass near the center hub region in the hot-zone during the crystal growth and (b) prevent the crucible/die unit from fracturing its supporting susceptor during cool-down.
申请公布号 US6139811(A) 申请公布日期 2000.10.31
申请号 US19990276453 申请日期 1999.03.25
申请人 ASE AMERICAS, INC. 发明人 CAO, JEFFREY X.;GIANCOLA, ROBERT M.;CAPRINI, CHARLES G.;GARCIA, DAVID
分类号 B01D9/00;C30B15/00;C30B15/34;C30B29/06;H01L21/208;(IPC1-7):B01D9/00 主分类号 B01D9/00
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