发明名称 Method to manufacture a capacitor with crown-shape using edge contact exposure
摘要 The present invention provides a method to manufacture a capacitor on a memory device. The capacitor formed on the memory device will only edge contacted with the related region, so a symmetrical formation of the capacitor to the related region of the memory device is not necessary, the manufacturing processes are therefore simplified to save the cost.
申请公布号 US6140178(A) 申请公布日期 2000.10.31
申请号 US19990287562 申请日期 1999.04.06
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 TSENG, HORNG-HUEI
分类号 H01L21/02;H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/02
代理机构 代理人
主权项
地址