发明名称 |
Method to manufacture a capacitor with crown-shape using edge contact exposure |
摘要 |
The present invention provides a method to manufacture a capacitor on a memory device. The capacitor formed on the memory device will only edge contacted with the related region, so a symmetrical formation of the capacitor to the related region of the memory device is not necessary, the manufacturing processes are therefore simplified to save the cost.
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申请公布号 |
US6140178(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19990287562 |
申请日期 |
1999.04.06 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
TSENG, HORNG-HUEI |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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