发明名称 Cathode ray tube comprising a semiconductor cathode
摘要 To prevent breakdown of an insulating layer located underneath a gate electrode, the gate electrode is connected to an external terminal via a high-ohmic resistor. The high-ohmic resistor may form part of a resistive network for biasing voltages for a plurality of gate electrodes. The resistive network may be realised partly on the insulating layer.
申请公布号 US6140664(A) 申请公布日期 2000.10.31
申请号 US19950408088 申请日期 1995.03.21
申请人 U.S. PHILIPS CORPORATION 发明人 SEEVINCK, EVERT;SPANJER, TJERK G.
分类号 H01J1/308;H01J1/30;H01J29/04;H01J29/50;(IPC1-7):H01L29/12 主分类号 H01J1/308
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