发明名称 |
Reduction of B-integral accumulation in lasers |
摘要 |
A pulsed laser is provided wherein the B-integral accumulated in the laser pulse is reduced using a semiconductor wafer. A laser pulse is generated by a laser pulse source. The laser pulse passes through a semiconductor wafer that has a negative nonlinear index of refraction. Thus, the laser pulse accumulates a negative B-integral. The laser pulse is then fed into a laser amplification medium, which has a positive nonlinear index of refraction. The laser pulse may make a plurality of passes through the laser amplification medium and accumulate a positive B-integral during a positive non-linear phase change. The semiconductor and laser pulse wavelength are chosen such that the negative B-integral accumulated in the semiconductor wafer substantially cancels the positive B-integral accumulated in the laser amplification medium. There may be additional accumulation of positive B-integral if the laser pulse passes through additional optical mediums such as a lens or glass plates. Thus, the effects of self-phase modulation in the laser pulse are substantially reduced.
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申请公布号 |
US6141362(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19980092053 |
申请日期 |
1998.06.05 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
MEYERHOFER, DAVID D.;KONOPLEV, OLEG A. |
分类号 |
G02F1/35;H01S3/23;(IPC1-7):H01S3/13 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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