发明名称 |
METAL-INSULATOR-METAL DIODES AND METHODS OF MANUFACTURE |
摘要 |
<p>A metal-insulator-metal diode device (10) and method of manufacture are described. The device includes conductive layers (12, 16) and a metal-insulator layer (14) comprising particles of a refractory metal (20) having an instrinsic oxide coating (20a) that are suspended in a dielectric binder (22) which may further contain dielectric filler material particles (24). In one embodiment, the metal-insulator layer (14) comprises particles of a refractory metal such as tantalum, the filler material comprises titanium dioxide particles, and the device is formed by printing. The diode device is especially useful for all-printed battery tester applications.</p> |
申请公布号 |
WO0063981(A1) |
申请公布日期 |
2000.10.26 |
申请号 |
WO2000US09873 |
申请日期 |
2000.04.13 |
申请人 |
THE GILLETTE COMPANY;LYNCH, ANNE, T.;GORDON, ERIC, S. |
发明人 |
LYNCH, ANNE, T.;GORDON, ERIC, S. |
分类号 |
H01L49/02;H01L45/00;H01M10/48;(IPC1-7):H01L45/00 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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