Diode manufacturing method, has buried p semiconductor barrier which is provided at head surface of semiconductor substrate.

摘要

The diode has a buried p semiconductor barrier which is provided at a head surface of a semiconductor substrate. A cathode is composed of a n semiconductor barrier which is provided on the buried p semiconductor barrier and an anode is composed of a p semiconductor barrier in such a way that it surrounds a side surface of the cathode and is in contact with it. The buried p semiconductor barrier has a higher acceptor content than the anode and the buried p semiconductor barrier is in contact with lower surfaces of the cathode and the anode.