发明名称 |
METHOD FOR FORMING CONTACT PAD HAVING LOW RESISTANCE |
摘要 |
PURPOSE: A method for forming a contact pad having a low resistance is to lower a contact resistance of a pad, and simply a contact pad forming process. CONSTITUTION: A contact pad forming method comprises the steps of: forming a device isolating films(44) on a substrate(40); forming a gate deposition materials(46) between the device isolating films; forming an impurity region(56) on the substrate between the gate deposition materials; forming a spacers(58) on sides of the gate deposition materials; and forming a pad(60) having a height equal to that of the gate depositions materials at the impurity region between the spacers. The pad has a difficult crystal state of upper and lower materials. The step forming the pads further comprises forming a first pad on the impurity region between the spacers, and forming a second pad having a crystal state of material difficult from that of the first pad on the first pad. The first pad is formed of a material film having an amorphous state. The second pad is formed of a material film having a poly state. The first and the second pad are formed of a Si1-xGex film.
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申请公布号 |
KR20000061627(A) |
申请公布日期 |
2000.10.25 |
申请号 |
KR19990010798 |
申请日期 |
1999.03.29 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
PARK, JEONG U;SONG, WON SANG;LEE, GIL GWANG;CHOI, TAE HUI |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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