发明名称 |
Nonvolatile memory device with double hierarchical decoding |
摘要 |
<p>A flash-EEPROM memory array (30) comprises cells grouped together in sectors (31) and has both hierarchical row and hierarchical column decoding. Global word lines (35) are connected to word lines (36) in each sector through local row decoders (33). Global bit lines (42) are connected to local bit lines (43) through local column decoders (40). A global column decoder (41) and sense amplifiers (47) separate an upper half (30a) from a lower half (30b) of the memory array.</p> |
申请公布号 |
EP1047077(A1) |
申请公布日期 |
2000.10.25 |
申请号 |
EP19990830236 |
申请日期 |
1999.04.21 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MICHELONI, RINO;CAMPARDO, GIOVANNI;COMMODARO, STEFANO;FARINA, FRANCESCO |
分类号 |
G11C5/02;G11C7/18;G11C8/10;G11C16/08;(IPC1-7):G11C8/00;G11C16/06 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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