| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a method for fabricating the same are to prevent an oxidization of a diffusion barrier film in employing a high dielectric film and suppress an increment of leakage current. CONSTITUTION: An interlayer insulating film(23) has a burying contact hole formed therein, the interlayer insulating film being formed on a semiconductor substrate(21). A contact plug(27) is buried in the burying contact hole and electrically connected to the semiconductor substrate. A diffusion barrier film(31) is formed on the contact plug so that it is buried in the burying contact hole. A lower electrode(39a) is formed on the interlayer insulating film so that it is connected to the diffusion barrier film. The lower electrode has a uniform surface morphology, and a hole therein. A first insulating film pattern(33a) is formed on the interlayer insulating film to separate the lower electrode from an adjacent lower electrode. A second insulating film pattern(41) is buried in the hole within the lower electrode. A high dielectric film(43) is formed to coat the second insulating film pattern, a first insulating film pattern, and the lower electrode. An upper electrode(45) is formed on the high dielectric film.
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