| 摘要 |
PURPOSE: A semiconductor memory device having a data input/output line structure commonly-shared in a number of banks is provided which minimizes the lowering of speed and power consumption during data writing operation to a memory cell by minimizing the load of an input/output line(I/O line). CONSTITUTION: A semiconductor memory device(100) has a data input/output line structure commonly-shared in a number of banks(110,111,112,...,117). The semiconductor memory device has a memory block(101) comprising a number of banks and data of a selected memory cell is inputted/output through the data input/output line. The memory block is divided into more than two banks groups(102,104) in an operation of writing data to a memory cell, and the data input/output line is divided into more than two local data input/output line in order to be connected to each bank group, and data are written to a memory cell through a local data input/output line connected to a bank group including the selected memory cell. And, in an operation of reading data of the memory cell, the local data input/output lines are connected each other. Therefore, the speed delay and the power consumption during a writing and a reading operations are minimized and the load of the data input/output lines become uniform.
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