发明名称 |
RESET GATE BIASING CIRCUIT OF SOLID STATE IMAGING DEVICE |
摘要 |
PURPOSE: A reset gate biasing circuit of a solid state imaging device is provided to completely perform a biasing process although the operational biasing process of a transistor is not performed completely, thereby efficiently performing a reset operation. CONSTITUTION: The reset gate biasing circuit of a solid state imaging device comprises a reset transistor(30) comprised of a floating diffusion portion for transmitting a charge using an electric potential well, a reset gate for resetting the charge in the floating diffusion portion, and a reset drain for draining the charge in the floating diffusion; a sensing amp(20) directly connected to the floating diffusion portion of the reset transistor and sensed by a voltage difference of the charge in the floating diffusion portion; a reset gate pad(10) for outputting a clock signal to reset the charge toward reset drain; and a voltage controlling portion(40) for receiving the clock signal output from the reset gate and then controlling a voltage applied to the reset gate of the reset transistor. |
申请公布号 |
KR20000061561(A) |
申请公布日期 |
2000.10.25 |
申请号 |
KR19990010677 |
申请日期 |
1999.03.27 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
HONG, DAE UK |
分类号 |
H01L27/146;(IPC1-7):H04N5/335 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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