发明名称 RESET GATE BIASING CIRCUIT OF SOLID STATE IMAGING DEVICE
摘要 PURPOSE: A reset gate biasing circuit of a solid state imaging device is provided to completely perform a biasing process although the operational biasing process of a transistor is not performed completely, thereby efficiently performing a reset operation. CONSTITUTION: The reset gate biasing circuit of a solid state imaging device comprises a reset transistor(30) comprised of a floating diffusion portion for transmitting a charge using an electric potential well, a reset gate for resetting the charge in the floating diffusion portion, and a reset drain for draining the charge in the floating diffusion; a sensing amp(20) directly connected to the floating diffusion portion of the reset transistor and sensed by a voltage difference of the charge in the floating diffusion portion; a reset gate pad(10) for outputting a clock signal to reset the charge toward reset drain; and a voltage controlling portion(40) for receiving the clock signal output from the reset gate and then controlling a voltage applied to the reset gate of the reset transistor.
申请公布号 KR20000061561(A) 申请公布日期 2000.10.25
申请号 KR19990010677 申请日期 1999.03.27
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 HONG, DAE UK
分类号 H01L27/146;(IPC1-7):H04N5/335 主分类号 H01L27/146
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