POWER SEMICONDUCTOR HAVING LOW ON-RESISTANCE AND HIGH THRESHOLD VOLTAGE

摘要

PURPOSE: A power semiconductor device is to provide a high power MOS transistor having a high threshold voltage, a low on-resistance, and a fast switching speed. CONSTITUTION: A first conductive drift layer(420) is formed on a drain region(410). A second conductive body region(430) is formed on the lower surface of the first conductive drift layer, and is formed in the form of at least one strip. The second conductive body region has both edges thereof connected to a frame region. A first conductive source region(440) is formed in the second conductive body region. The first conductive source region has a depth shallower than that of the second conductive body region. A source electrode is formed on the first conductive source region. A drain electrode(400) is formed on an opposite surface of the drain region with the first conductive drift layer formed thereon. A gate electrode(470) is formed between the edge of the source region and the edge of the second conductive body region adjacent thereto, and between the second conductive body regions.