| 摘要 |
PURPOSE: A photoresist compound, fabricating method thereof and method for forming a pattern the same are provided to excel a profile of an obtained pattern and stably maintain the photoresist compound during a long time by having an excellent sensitivity and resolution and an excellent heat resistance and solution stability. CONSTITUTION: The photoresist compound has a photosensitizer obtained for mixing 30-70 weight percents of the first photosensitive compound indicated as a structure formula 1 and 70-30 weight percents of the second photosensitive compound indicated as a structure formula 2a or a structure formula 2b, a resin capable of adapting to a positive photoresist, and a solvent. An R1 and an R2 in the structure formula 1 are same or different, and indicate a hydrogen atom, an 1,2-naphthoquinonediazyde-4-sulfonyle group, an 1,2-naphthoquinonediazyde-5-sulfonyle group, or an 1,2-naphthoquinonediazyde-6-sulfonyle group. An R3, an R4 and an R5 are same or different, and are the hydrogen atom, the 1,2-naphthoquinonediazyde-4-sulfonyle group, the 1,2-naphthoquinonediazyde-5-sulfonyle group, or the 1,2-naphthoquinonediazyde-6-sulfonyle group. An X1a, an X1b, an X1c, an X1d, an X2a, an X2b and an X2c indicate the hydrogen atom or an alkyl group.
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