ANTI-FUSE CIRCUIT FOR POST-PACKAGE DRAM REPAIRING

摘要

PURPOSE: Anti-fuse circuit for a post-package DRAM repairing is provided to enhance a reliability and a function of synchronous DRAM, and enhances a production yield by repairing many kinds of inferior packages in electrically programmable IC. CONSTITUTION: IC activates a redundant memory position, and has many substitution address signal generators for generating a substitution address signal. A program address generation circuit generates a program address signal according to a test mode signal and address signal. Many anti-fuse unit circuits(30) are connected to each substitution address signal generator, includes anti-fuse element, and is selected by the program address signal. The anti-fuse unit circuits(30) included in the selected anti-fuse unit circuit are programmed by using a voltage signal, and activates a corresponding substitution address generator. Thereby, the anti-fuse circuit for a post-package DRAM repairing enhances a reliability and a function of synchronous DRAM, and enhances a production yield by repairing many kinds of inferior packages in electrically programmable IC.