| 摘要 |
A self-aligned contact (122) to a substrate (12) of a semiconductor device (100) is formed using a stopping layer (110) overlying the substrate (12). The stopping layer (110) comprising a material selected from the group consisting of silicon-rich nitride, silicon-rich oxide, carbon-rich nitride, silicon carbide, boron nitride, organic spin-on-glass, graphite, diamond, carbon-rich oxide, nitrided oxide, and organic polymer. The stopping layer (110) promotes better semiconductor device (100) performance by contributing to greater selectivity with respect to an etch process used to remove an insulating layer (112) formed overlying the stopping layer (110).
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