LASER PROCESSING SYSTEM AND LASER PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To enhance crystallinity of a silicon film formed through irradiation with laser light by crystallizing an amorphous silicon film subjected to heat treatment and keeping a sample within a specified temperature width of heat treatment temperature during irradiation with laser beam thereby attaining a constant effect at all times in laser annealing technology. SOLUTION: A large number of substrates formed with a silicon film to be irradiated with laser beam or a thin film transistor in the way of fabrication and contained in a cassette are moved, along with the cassette, to a receiving/ delivering chamber 101. A delivery chamber 102 is provided with a robot arm 106 incorporating a heating means contrived to keep the substrate at a constant temperature even during carriage. The substrates are carried, sheet by sheet, between the delivery chamber 102 and a laser irradiation chamber 103 and between the delivery chamber 102 and a heating chamber 104 for containing a large number of substrates. After heat treatment, heating temperature is preferably in the range of 550-600 deg.C during irradiation with laser beam and heating is carried out preferably in the range of 550±100 deg.C.