| 摘要 |
In a semiconductor device, a TiN plug is formed to filled up a contact hole which is formed to penetrate through an insulator film on a conductive silicon layer in a surface region of a silicon substrate. A first titanium silicide film is formed on a bottom surface of the TiN plug, so that the TiN plug is electrically connected to the conductive silicon layer through the first titanium silicide film. A second titanium silicide film is formed on a top surface of the TiN plug, and a polysilicon electrode is formed on the second titanium silicide film, so that the TiN plug is electrically connected to the polysilicon electrode through the second titanium silicide film. Thus, the contact resistance between the TiN plug and the polysilicon electrode is reduced.
|
