发明名称 |
Stacked capacitator memory cell and method of fabrication |
摘要 |
A memory cell includes a field effect transistor and a stacked capacitor. The stacked capacitor has one plate formed by a platinum layer over the side walls of a portion of a dielectric layer that overlies a conductive layer that makes contact to a conductive plug connected to the storage node of the cell. The capacitor dielectric overlies the sidewalls and top of the dielectric layer portion and the other plate of the capacitor is formed by a platinum layer over the capacitor dielectric.
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申请公布号 |
US6136660(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US19980161861 |
申请日期 |
1998.09.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SHEN, HUA;KUNKEL, GERHARD;GUTSCHE, MARTIN |
分类号 |
H01L27/108;H01L21/02;H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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