发明名称 Stacked capacitator memory cell and method of fabrication
摘要 A memory cell includes a field effect transistor and a stacked capacitor. The stacked capacitor has one plate formed by a platinum layer over the side walls of a portion of a dielectric layer that overlies a conductive layer that makes contact to a conductive plug connected to the storage node of the cell. The capacitor dielectric overlies the sidewalls and top of the dielectric layer portion and the other plate of the capacitor is formed by a platinum layer over the capacitor dielectric.
申请公布号 US6136660(A) 申请公布日期 2000.10.24
申请号 US19980161861 申请日期 1998.09.28
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 SHEN, HUA;KUNKEL, GERHARD;GUTSCHE, MARTIN
分类号 H01L27/108;H01L21/02;H01L21/8242;(IPC1-7):H01L21/20 主分类号 H01L27/108
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