| 摘要 |
<p>PROBLEM TO BE SOLVED: To significantly reduce occurrence of irregular operations of a semiconductor device, such as fluctuation in signal level, malfunction, and signal delay by reducing the high-frequency noises occurring at a signal line. SOLUTION: On a substrate 1, a semiconductor active element and a signal line 3 which supplies an electric charge to it are provided. Here, a capacity forming electrode 4 of a reference electric potential is so arranged that at least a part of it faces the signal line 3, and an interlayer insulating film 10 arranged between the facing signal line 3 and the capacity formation electrode 4, are provided.</p> |
