发明名称 FORMATION OF FINE METALLIC PATTERN
摘要 PROBLEM TO BE SOLVED: To form a structure of an extremely small size by electrodeposition at an arbitrary point on a substrate. SOLUTION: A conductive probe 12 having a pointed end is brought into proximity to the conductive substrate 10 provided with the patterns of an insulator on the substrate in a plating liquid and the electrodeposition is executed on the substrate. The patterns of the insulator are formed of alumina or anodically oxidized alumina. The patterns of the insulator are formed by a photolithography method. The size of the patterns of the insulator is <=1μm. The size of the aperture at the front end of the conductive probe having the pointed end where the insulator is not formed is <=0.1μm.
申请公布号 JP2000297396(A) 申请公布日期 2000.10.24
申请号 JP19990102770 申请日期 1999.04.09
申请人 SEIKO EPSON CORP 发明人 MASUDA HIDEKI;ISHIDA MASAYA;NEHASHI SATOSHI
分类号 H05K3/18;C25D5/04;(IPC1-7):C25D5/04 主分类号 H05K3/18
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