发明名称 PRODUCTION OF HIGH-PURITY GASEOUS NITROGEN TRIFLUORIDE
摘要 PROBLEM TO BE SOLVED: To greatly decrease the gaseous impurities to be formed and to enhance the purity of formed gases by controlling the quantity of carbon which is the gaseous impurity component to be entrained in crude gases among the impurities in a nickel electrode used for an anode. SOLUTION: The gaseous trifluoride is produced by a fused salt electrolysis method using the nickel electrode for the anode and acidic ammonium fluoride as an electrolyte. The quantity of the carbon among the impurity elements included in the nickel used for the anode is limited to <=400 mass ppm, more preferably <=200 mass ppm and further preferably <=100 mass ppm, by which the formation of the gaseous impurities occurring in the carbon element is suppressed. The purity of the nickel is preferably >=98.5 mass %. The restriction of the sulfur component in the nickel to <=20 mass ppm is preferable for the purpose of suppressing the formation of gaseous SF6. The total of C, B, Si, P, As, Mo, Ge and W which are the impurity components is preferably <=400 mass ppm.
申请公布号 JP2000297393(A) 申请公布日期 2000.10.24
申请号 JP20000029044 申请日期 2000.02.07
申请人 MITSUI CHEMICALS INC 发明人 YOSHIKAWA AKIO;MOROKUMA TATSUMA;HAYASHIDA HIROMI
分类号 C25B11/04;C25B1/24;(IPC1-7):C25B1/24 主分类号 C25B11/04
代理机构 代理人
主权项
地址