METHOD FOR FORMING CONTACT IN SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To prevent decrease in element characteristics or a warpage in wafer due to stresses and cracks in nitride film in heat treatment, when a contact is formed in a semiconductor element. SOLUTION: An etching barrier layer of persilicon oxynitride film 57 is formed on a semiconductor substrate 51 with a prescribed lower structure, and an interlayer insulating film 59 is formed thereon. A photosensitive pattern for exposing a part 63 is scheduled as a contact hole in the interlayer insulating film 59 is formed to remove the photosensitive pattern taking advantage of the etching ratio of C-H-F-based gas. With a mask of the selectively removed interlayer insulating film 59, exposed part of the persilicon oxynitride film 57 is removed to form a self-aligned contact.