| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared ray sensor of high sensitivity and durability which is manufactured at a low cost. SOLUTION: An SiO2 film 25 is formed by thermal oxidation on a heat sink part 22 comprising a void part 23, on which an MgF2 film (fluoride insulating film 26) is formed by an electron beam vapor-deposition method. After a heat-insulating thin-film 24 comprising the SiO2 film 25 and MgF2 film is plated on the void part 23, a thermoelectric conversion element 27 and infrared ray absorbing layer 29 are provided on it.
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