发明名称 |
Latch-up controllable insulated gate bipolar transistor |
摘要 |
A latch-up controllable insulated gate bipolar transistor is formed with a thyristor structure, which has a first region of a first conductivity type, a second region of a second conductivity type formed on the first region, a third region of the first conductivity type formed on the second region, and a fourth region of the second conductivity type contacting the third region and forming a P-N junction therewith. The first and third regions contact a first and second electrode regions respectively. A first field effect transistor means for controlling conduction between the fourth region and the second region in response to an actuation bias; and a second field effect transistor means between the fourth region and the second electrode region for turning the thyristor off in response to a cutoff bias. The insulated gate bipolar transistor of the present invention are latch-up controllable, of a high voltage withstand and of a lower forward voltage drop simultaneously
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申请公布号 |
US6137122(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US19990453758 |
申请日期 |
1999.12.02 |
申请人 |
ANALOG AND POWER ELECTRONICS CORP. |
发明人 |
LIAW, CHORNG-WEI;LIN, MING-JANG;SHIUE, TIAN-FURE;CHENG, HUANG-CHUNG;HSU, CHING-HSIANG;LIN, WEI-JYE;TIEN, HAU-LUEN |
分类号 |
H01L29/745;(IPC1-7):H01L29/74;H01L31/111;H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L29/745 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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