| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode having the structure of a highly efficient and inexpensive GaP light emitting diode, without damaging the inside parts of a crystal and to provide a manufacture method. SOLUTION: A first n-type GaP epitaxial layer 2 is formed on the surface of an n-type GaP substrate 1 through a liquid phase epitaxial growth method. A second n-type epitaxial layer 3 is formed on the rear side of the n-type GaP substrate 1. Then, a third n-type GaP epitaxial layer 4, a first p-type GaP epitaxial layer 5 and a second p-type GaP epitaxial layer 6 are sequentially formed on the surface of the first n-type GaP epitaxial layer 1. In the epitaxial growth, a mirror surface state is formed on the back side by the second n-type epitaxial layer 3 formed on the rear side, as the reflectance on the rear side becomes high and newly polishing of the back side to mirror-plane level after the completion of epitaxial growth is dispensed with. |
