| 摘要 |
PROBLEM TO BE SOLVED: To prevent accumulation of minority carriers and to realize high frequency operation by removing p-n junction in a rectifying element by means of SOI technology and installing only Schottky junction. SOLUTION: In a rectifying element, a silicon oxide film is installed on the main face side of a single-crystal silicon semiconductor substrate 1 as an insulating film 2, the semiconductor substrate of stack structure having an n-type single-crystal silicon semiconductor layer 3 on the insulating film 2 is used, a groove is given to the n-type single-crystal silicon semiconductor layer 3, a silicon oxide film is installed in the groove as an insulting film 4 and an n-type heavily-doped region is arranged as a cathode region 5. Titanium is fixed on a surface facing the cathode region 5 and on the insulating film 4 via the groove of the n-type single crystal silicon semiconductor layer 3 as an anode electrode 6, an insulating film 7 is given to a desired region on the substrate surface of stack structure and the inner part of the groove, a cathode electrode 8 is give to the cathode region 5 and an electrode 9 on the anode electrode 6. |
