| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering device capable of reducing the incident angle. SOLUTION: In a vacuum tank 11, plural shield boards 21 to 23 provided with pores 31 to 33 at the positions same as those of targets 51 to 53 are arranged. Sputtering particles obliquely sprung from the targets 51 to 53 deposit on the surfaces of the shield boards 21 to 23, and only the vertically sprung ones can arrive at the surface of a substrate 12. Thus, thin films can uniformly be formed on the insides of the fine pores with high aspects. When sputtering gas is introduced from the vicinities of the targets 51 to 53, reactive gas is introduced from the vicinity of the substrate 12, and evacuation is executed from the vicinity of the substrate 12, reactive gas does not introduce into the sides of the targets 51 to 53, so that the alternation of the surfaces of the targets 51 to 53 can be prevented.
|
